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| TPC8116-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8116-H High Efficiency DCDC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications * * * * * * * Small footprint due to a small and thin package High speed switching Small gate charge: QSW = 9.7 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 24m (typ.) High forward transfer admittance: |Yfs| =14 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -40 V) Enhancement mode: Vth =-0.8 to-2.0 V (VDS =-10 V, ID =-1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD Rating -40 -40 20 -7.5 -30 1.9 Unit V V V A JEDEC JEITA TOSHIBA 2-6J1B Pulsed (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range Weight: 0.085 g (typ.) W PD 1.0 W Circuit Configuration 8 7 6 5 EAS IAR EAR Tch Tstg 26 -7.5 0.12 150 -55 to 150 mJ A mJ C C 1 2 3 4 Note: For Notes 1 to 4, refer to the next page. This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-01-17 TPC8116-H Thermal Characteristics Characteristic Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) 65.8 C/W Symbol Max Unit Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 125 C/W Marking (Note 5) TPC8116 H Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: The channel temperature should not exceed 150C during use. (b) Device mounted on a glass-epoxy board (b) Note 2: (a) Device mounted on a glass-epoxy board (a) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) (a) (b) Note 3: VDD = -24 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 , IAR = -7.5 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * on the lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-01-17 TPC8116-H Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time tf toff VDD -32 V, VGS =-10V, ID = - -7.5A VDD -32 V, VGS = -5 V, ID = - - 7.5A VDD -32 V, VGS = -10 V, ID = - - 7.5A Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VGS 0 V -10 V ID = - 3.8 A VOUT VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = -40 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 20 V VDS = -10 V, ID = -1 mA VGS = -4.5 V, ID = - 3.8 A VGS = -10 V, ID = - 3.8 A VDS = -10 V, ID = - 3.8 A Min Typ. Max Unit -40 -20 -0.8 7 29 24 14 1190 170 250 5 12 12 43 27 15 3.2 8.1 9.7 10 -10 -2.0 37 A A V V m 30 S pF RL = 5.3 4.7 ns VDD -20 V - Duty < 1%, tw = 10 s = nC Total gate charge (gate-source plus gate-drain) Qg Gate-source charge 1 Gate-drain ("Miller") charge Gate switch charge Qgs1 Qgd QSW Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition Min Typ. Max Unit A V IDR = -7.5 A, VGS = 0 V -30 1.2 3 2006-01-17 TPC8116-H ID - VDS -10 -10 -8 -20 -4 -3.2 -3.4 -3 -2.8 -2.7 -4 -2.6 -2.5 -2 VGS = -2.4 V Common source Ta = 25C Pulse test -10 -8 -16 -6 -12 -4.5 ID - VDS -4 -3.4 Common source Ta = 25C Pulse test -3.2 -3 Drain current ID (A) -4.5 -6 Drain current ID (A) -8 -6 -8 -2.8 -4 -2.6 VGS = -2.4 V 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS -30 -0.5 VDS - VGS -25 Drain-source voltage VDS (V) Common source VDS = -10 V Pulse test -0.4 Common source Ta = 25 Pulse test Drain current ID (A) -20 -0.3 ID = -7.5 A -15 -0.2 -10 100 -5 -0.1 -3.8 -1.9 25 Ta = -55C 0 0 -1 -2 -3 -4 -5 0 0 -2 -4 -6 -8 -10 -12 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID Forward transfer admittance |Yfs| (S) 100 Common source VDS = -10 V Pulse test Ta = -55C 100 300 Common source Ta = 25C Pulse test 100 RDS (ON) - ID 10 Drain-source ON-resistance RDS (ON) (m) 25 -4.5 V 30 1 VGS = -10 V 10 0.1 -0.1 -1 -10 -100 3 -0.1 -1 -10 -100 Drain current ID (A) Drain current ID (A) 4 2006-01-17 TPC8116-H RDS (ON) - Ta 50 -100 ID = -7.5 A Common source Pulse test -3.8 -1.9 Common source Ta = 25C Pulse test IDR - VDS 40 Drain reverse current IDR (A) -10 -4.5 -3 Drain-source ON-resistance RDS (ON) (m) -10 30 VGS = -4.5 V ID = -1.9/-3.8/-7.5A 20 -10 V 10 -1 0 -80 -0.1 -40 0 40 80 120 160 0 0.2 -1 0.4 0.6 VGS = 0 V 0.8 1.0 1.2 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 -2.0 Vth - Ta Gate threshold voltage Vth (V) -1.6 (pF) Ciss 1000 Capacitance C -1.2 Coss 100 Common source VGS = 0 V f = 1 MHz Ta = 25C 10 -0.1 -1 -10 Crss -0.8 Common source VDS = -10 V ID = -1 mA Pulse test -40 -0.4 -100 0 -80 0 40 80 120 160 Drain-source voltage VDS (V) Ambient temperature Ta (C) PD - Ta 2.0 (1) Device mounted on a glass-epoxy Dynamic input/output characteristics -50 Common source ID = -7.5 A Ta = 25C Pulse test -16 -12 -8 -20 VDD = -32 V -8 -20 (1) Drain-source voltage VDS (V) (W) 1.6 (2) Device mounted on a glass-epoxy -40 -16 board (b) (Note 2b) 10s Drain power dissipation PD 1.2 0.8 (2) -10 VGS -4 0.4 0 0 50 100 150 200 0 0 10 20 30 40 0 50 Ambient temperature Ta (C) Total gate charge Qg (nC) 5 2006-01-17 Gate-source voltage -30 VDS VGS (V) board (a) (Note 2a) TPC8116-H rth - tw rth (C/W) 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (2) 100 (1) Transient thermal impedance 10 1 Single - pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area -100 ID max (Pulse) * Drain current ID (A) t =1 ms * -10 10 ms * -1 * Single - pulse Ta = 25C Curves must be derated linearly with increase in temperature. -0.1 -0.1 -1 VDSS max -10 -100 Drain-source voltage VDS (V) 6 2006-01-17 TPC8116-H 7 2006-01-17 |
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